caution observe precautions when handling because these devices are sensitive to electrostatic discharge. the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all devices/types available in every country. please check with local nec compound semiconductor devices representative for availability and additional information. document no. pu10123ej03v0ds (3rd edition) date published july 2003 cp(k) printed in japan silicon power mos fet ne5520279a 3.2 v operation silicon rf power ldmos fet for 1.8 ghz 1.6 w transmission amplifiers data sheet ? ? ? ? nec compound semiconductor devices 2001, 2003 description the ne5520279a is an n-channel silicon power laterally diffused mos fet specially designed as the transmission power amplifier for 3.2 v dcs1800 handsets. dies are manufactured using our newmos2 technology (our wsi gate laterally diffused mos fet) and housed in a surface mount package. this device can deliver 32.0 dbm output power with 45% power added efficiency at 1.8 ghz under the 3.2 v supply voltage. features ? high output power : p out = 32.0 dbm typ. (v ds = 3.2 v, i dset = 700 ma, f = 1.8 ghz, p in = 25 dbm) high power added efficiency : add = 45% typ. (v ds = 3.2 v, i dset = 700 ma, f = 1.8 ghz, p in = 25 dbm) high linear gain : g l = 10 db typ. (v ds = 3.2 v, i dset = 700 ma, f = 1.8 ghz, p in = 5 dbm) surface mount package : 5.7 5.7 1.1 mm max. single supply : v ds = 2.8 to 6.0 v application digital cellular phones : 3.2 v dcs1800 handsets ordering information part number package marking supplying form ne5520279a-t1 79a a2 12 mm wide embossed taping gate pin face the perforation side of the tape qty 1 kpcs/reel ne5520279a-t1a 12 mm wide embossed taping gate pin face the perforation side of the tape qty 5 kpcs/reel remark to order evaluation samples, contact your nearby sales office. part number for sample order: ne5520279a the mark ? ? ? ? shows major revised points.
data sheet pu10123ej03v0ds 2 ne5520279a absolute maximum ratings (t a = +25 c) parameter symbol ratings unit drain to source voltage v ds 15.0 v gate to source voltage v gs 5.0 v drain current i d 0.6 a drain current (pulse test) i d note 1.2 a total power dissipation p tot 12.5 w channel temperature t ch 125 c storage temperature t stg ? 55 to +125 c note duty cycle 50%, t on 1 s recommended operating conditions parameter symbol test conditions min. typ. max. unit drain to source voltage v ds 2.8 3.0 6.0 v gate to source voltage v gs 02.03.0v drain current i d duty cycle 50%, t on 1 s ? 800 1 000 ma input power p in f = 1.8 ghz, v ds = 3.2 v 24 25 30 dbm electrical characteristics (t a = +25 c, unless otherwise specified, using nec standard test fixture) parameter symbol test conditions min. typ. max. unit gate to source leak current i gss v gs = 5.0 v ?? 100 na drain to source leakage current (zero gate voltage drain current) i dss v ds = 6.0 v ?? 100 na gate threshold voltage v th v ds = 3.5 v, i d = 1 ma 1.0 1.4 1.9 v thermal resistance r th channel to case ?? 8 c/w transconductance g m v ds = 3.2 v, i d = 700 ma ? 1.3 ? s drain to source breakdown voltage bv dss i dss = 10 a1518 ? v output power p out f = 1.8 ghz, v ds = 3.2 v, 30.5 32.0 ? dbm drain current i d p in = 25 dbm, ? 800 ? ma power added efficiency add i dset = 700 ma (rf off), note1 40 45 ? % linear gain note2 g l ? 10 ? db notes 1. dc performance is 100% testing. rf performance is testing several samples per wafer. wafer rejection criteria for standard devices is 1 reject for several samples. 2. p in = 5 dbm
data sheet pu10123ej03v0ds 3 ne5520279a typical characteristics (t a = +25 c) p out i d d add f = 1.8 ghz v ds = 3.2 v i dset = 300 ma f = 1.8 ghz v ds = 3.2 v i dset = 700 ma f = 2.00 ghz v ds = 5.0 v i dset = 300 ma f = 2.00 ghz v ds = 5.0 v p in = 27 dbm f = 1.8 ghz f = 1 mhz v ds = 3.2 v i dset = 700 ma f = 1.8 ghz v ds = 3.2 v p in = 25 dbm p out i d d add p out i d d add p out i d d add p out i d d add im 3 im 5 2 500 2 000 1 500 1 000 500 0 ? output power p out (dbm) input power p in (dbm) output power, drain current 2 tones to output power p out (dbm) output power p out (dbm) output power, drain current drain efficiency d (%) power added efficiency add (%) gate to source voltage v gs (v) gate to source voltage v gs (v) output power, drain current d , add vs. input power d , add vs. input power intermodulation distortion vs. 2 tones to output power d , add vs. input power input power p in (dbm) input power p in (dbm) drain current i d (ma) output power p out (dbm) intermodulation distortion im 3 , im 5 (dbc) output power p out (dbm) output power p out (dbm) drain efficiency d (%) power added efficiency add (%) drain current i d (ma) 100 75 50 25 0 drain efficiency d (%) power added efficiency add (%) drain current i d (ma) 100 75 50 25 0 drain efficiency d (%) power added efficiency add (%) drain current i d (ma) 100 75 50 25 0 drain efficiency d (%) power added efficiency add (%) drain current i d (ma) 100 75 50 25 0 output power, drain current d , add vs. gate to source voltage output power, drain current d , add vs. gate to source voltage ? ? ? ? ? 0 4 3 2 1 35 30 25 20 15 10 35 30 25 20 15 10 51525 10 20 30 10 20 30 15 25 35 35 15 25 10 20 30 0 4 3 2 1 ? 10 ? 20 ? 30 ? 40 ? 50 ? 60 ? 70 35 30 25 20 15 10 40 35 30 25 20 15 40 35 30 25 20 15 1 250 1 000 750 500 250 0 2 500 2 000 1 500 1 000 500 0 1 250 1 000 750 500 250 0 100 75 50 25 0 51525 10 20 30 2 500 2 000 1 500 1 000 500 0 remark the graphs indicate nominal characteristics.
data sheet pu10123ej03v0ds 4 ne5520279a s-parameters s-parameters/noise parameters are provided on the nec compound semiconductor devices web site in a form (s2p) that enables direct import to a microwave circuit simulator without keyboard input. click here to download s-parameters. [rf and microwave] [device parameters] url http://www.csd-nec.com/ large signal impedance (v ds = 3.2 v, i d = 700 ma, f = 1.8 ghz) f (ghz) z in ( ? )z ol ( ? ) note 1.8 1.77 ? j6.71 1.25 ? j5.73 note z ol is the conjugate of optimum load impedance at given voltage, idling current, input power and frequency.
data sheet pu10123ej03v0ds 5 ne5520279a evaluation board for 1.8 ghz unit : mm 30.0 32.0 v gs v ds c1 c2 c7 c8 c3 c4 c9 r1 c5 c6 l1 c6 c7 c8 c9 symbol value comment c1, c3 4.7 pf c2 2.4 pf c4 2.2 pf c5 0.8 pf c6 10 pf c7 1 000 pf c8 0.22 f c9 3.3 f - 16v r1 1 000 ? l1 22 nh circuit board t = 0.4 mm, r = 4.5 r4775
data sheet pu10123ej03v0ds 6 ne5520279a package dimensions 79a (unit: mm) 0.90.2 0.20.1 (bottom view) 3.60.2 1.50.2 1.2 max. 0.8 max. 1.0 max. source gate drain 0.40.15 5.7 max. 5.7 max. 0.60.15 0.80.15 4.4 max. 4.2 max. source gate drain a2 0x001 79a package recommended p.c.b. layout (unit: mm) 1.7 4.0 0.5 1.0 5.9 1.2 gate source drain 0.5 6.1 0.5 through hole: 0.2 33 stop up the hole with a rosin or something to avoid solder flow.
data sheet pu10123ej03v0ds 7 ne5520279a recommended soldering conditions this product should be soldered and mounted under the following recommended conditions. for soldering methods and conditions other than those recommended below, contact your nearby sales office. soldering method soldering conditions condition symbol infrared reflow peak temperature (package surface temperature) : 260 c or below time at peak temperature : 10 seconds or less time at temperature of 220 c or higher : 60 seconds or less preheating time at 120 to 180 c : 120 30 seconds maximum number of reflow processes : 3 times maximum chlorine content of rosin flux (% mass) : 0.2%(wt.) or below ir260 vps peak temperature (package surface temperature) : 215 c or below time at temperature of 200 c or higher : 25 to 40 seconds preheating time at 120 to 150 c : 30 to 60 seconds maximum number of reflow processes : 3 times maximum chlorine content of rosin flux (% mass) : 0.2%(wt.) or below vp215 wave soldering peak temperature (molten solder temperature) : 260 c or below time at peak temperature : 10 seconds or less preheating temperature (package surface temperature) : 120 c or below maximum number of flow processes : 1 time maximum chlorine content of rosin flux (% mass) : 0.2%(wt.) or below ws260 partial heating peak temperature (pin temperature) : 350 c or below soldering time (per pin of device) : 3 seconds or less maximum chlorine content of rosin flux (% mass) : 0.2%(wt.) or below hs350-p3 caution do not use different soldering methods together (except for partial heating).
data sheet pu10123ej03v0ds 8 ne5520279a m8e 00. 4 - 0110 the information in this document is current as of july, 2003. the information is subject to change without notice. for actual design-in, refer to the latest publications of nec's data sheets or data books, etc., for the most up-to-date specifications of nec semiconductor products. not all products and/or types are available in every country. please check with an nec sales representative for availability and additional information. no part of this document may be copied or reproduced in any form or by any means without prior written consent of nec. nec assumes no responsibility for any errors that may appear in this document. nec does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of nec semiconductor products listed in this document or any other liability arising from the use of such products. no license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec or others. descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. the incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. nec assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. while nec endeavours to enhance the quality, reliability and safety of nec semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. to minimize risks of damage to property or injury (including death) to persons arising from defects in nec semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. nec semiconductor products are classified into the following three quality grades: "standard", "special" and "specific". the "specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. the recommended applications of a semiconductor product depend on its quality grade, as indicated below. customers must check the quality grade of each semiconductor product before using it in a particular application. "standard": computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "special": transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "specific": aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. the quality grade of nec semiconductor products is "standard" unless otherwise expressly specified in nec's data sheets or data books, etc. if customers wish to use nec semiconductor products in applications not intended by nec, they must contact an nec sales representative in advance to determine nec's willingness to support a given application. (note) (1) "nec" as used in this statement means nec corporation, nec compound semiconductor devices, ltd. and also includes its majority-owned subsidiaries. (2) "nec semiconductor products" means any semiconductor product developed or manufactured by or for nec (as defined above). ? ? ? ? ? ?
nec compound semiconductor devices hong kong limited e-mail: ncsd-hk@elhk.nec.com.hk (sales, technical and general) hong kong head office taipei branch office korea branch office tel: +852-3107-7303 tel: +886-2-8712-0478 tel: +82-2-558-2120 fax: +852-3107-7309 fax: +886-2-2545-3859 fax: +82-2-558-5209 nec electronics (europe) gmbh http://www.ee.nec.de/ tel: +49-211-6503-01 fax: +49-211-6503-487 california eastern laboratories, inc. http://www.cel.com/ tel: +1-408-988-3500 fax: +1-408-988-0279 0306 nec compound semiconductor devices, ltd. http://www.csd-nec.com/ e-mail: salesinfo@csd-nec.com (sales and general) techinfo@csd-nec.com (technical) 5th sales group, sales division tel: +81-44-435-1588 fax: +81-44-435-1579 for further information, please contact ne5520279a
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